Device Applications of Silicon Nanocrystals and Nanostructures

Description

Semiconductors exhibit a critical size at which quantum confinement effects become apparent. A measure of this condition is the exciton Bohr radius. This value in single-crystalline silicon is below 5 nm, which is exceptionally small in comparison to most conventional semiconductors, and is one reason why the development of silicon-based logic and memory devices has followed an anticipated road map. In fact, however, silicon devices have evolved in all stages of the design, processing, and fabrication technologies. The scaling principle is the engine driving these advances in integrated circuitry. The scaling of advanced MOS technology is now entering the region of 10 nm. As the scaling extends to the region below the quantum-size criterion, it should be noted that the original optical, electrical, thermal, and chemical properties of bulk silicon are substantially modified. As a consequence, various useful functions are induced in quantum-sized nanocrystalline or nanostructured silicon materials. For instance, a significant band gap widening and delocalization of carriers in momentum space make the optical property free from the traditional direct or indirect-transition regime. Efficient visible luminescence is created and opens the door toward integrated silicon photonics. In addition, the range of possible applications in quantumsized silicon is extending to the field of electronics, acoustics, and biology. The main theme of this book is how widely the potential functions of silicon have been implemented as devices in the nanometer region, and that silicon devices in the quantum zone produce various technological values different from the scaling merits. The volume is composed of three main subjects: photonic devices (four chapters), electronic devices (five chapters), and functional devices (two chapters).

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