Landolt-Bornstein: Numerical Data and Functional Relationships in Science and Technology - New Series
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E. Kasper, N. Koshida, T.P. Pearsall, Y. Shiraki, G. Theodorou, N. Usami
"Landolt-Bornstein: Numerical Data and Functional Relationships in Science and Technology - New Series"
Springer | 2007-06 | ISBN: 3540296476 | 136 pages | PDF | 2,7 MB
"Landolt-Bornstein: Numerical Data and Functional Relationships in Science and Technology - New Series"
Springer | 2007-06 | ISBN: 3540296476 | 136 pages | PDF | 2,7 MB
Volume III/34 summarizes our current knowledge of semiconductor quantum structures. Subvolume 34A and 34B cover growth structuring and doping, and electronic transport, respectively. Subvolume 34C deals with the optical properties. Subvolume 34C1 offers the theoretical and experimental basis, as well as data on III-V, I-VII and IV-VI semiconductors. Data on II-VI compounds are covered in subvolume 34C2. The present subvolume 34C3 deals with the important class of elemental semiconductors of the group IV, focusing on silicon and germanium. While silicon is the backbone of the worldwide semiconductor industry, it is an indirect gap material, which seriously hampers its use for light emitting or even lasing devices. The subvolume discusses current ideas to overcome this problem by forming group IV quantum structures like Si/Ge superlattices, quantum wires and quantum dots, or nanocrystals.
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