Very High Speed Integrated Circuits: Gallium Arsenide LSI (Semiconductors and Semimetals)

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Very High Speed Integrated Circuits: Gallium Arsenide LSI (Semiconductors and Semimetals)
Academic Press | 1990-05 | ISBN: 0127521291 | 309 pages | PDF | 13,5 Mb

By Toshiaki Ikoma
Publisher: Academic Press
Number Of Pages: 309
Publication Date: 1990-05
ISBN-10 / ASIN: 0127521291
ISBN-13 / EAN: 9780127521299
Binding: Hardcover

Preface
Very high speed integrated circuits are important for supercomputers and for digital
communications (e.g., integrated digital networks and mobile land communications).
Although silicon integrated circuit technologies are progressing into a
submicron range of the scaling rule and the nanosecond range of operational speed,
silicon itself has a limit of low mobility as compared with gallium arsenide and with
some of the other 111-V semiconductors. Moreover, the existence of the gallium
arsenide semi-insulating substrate allows the reduction of parasitic circuit elements
in integrated circuits; hence, gallium arsenide integrated circuits have an advantage
over a p-n junction isolation used in silicon LSIs. Gallium arsenide LSIs are thus
expected to be superior to silicon LSIs in terms of speed and power dissipation, and
they have been developed intensively.
...


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